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| Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications. PHT11N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 C Drain current (DC) Tamb = 25 C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 10.7 4.9 8.3 150 40 UNIT V A A W C m PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Tsp = 25 C Tamb = 25 C Tsp = 100 C Tamb = 100 C Tsp = 25 C Tamb = 25 C Tsp = 25 C Tamb = 25 C MIN. - 55 MAX. 55 55 20 10.7 4.9 7.5 3.4 42 19 8.3 1.8 150 UNIT V V V A A A A A A W W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV December 1997 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-amb PARAMETER From junction to solder point From junction to ambient CONDITIONS Mounted on any PCB Mounted on PCB of Fig.19 TYP. 12 - PHT11N06T MAX. 15 70 UNIT K/W K/W STATIC CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current CONDITIONS VGS = 0 V; ID = 0.25 mA Tj = -55C VDS = VGS; ID = 1 mA Tj = 150C Tj = -55C VDS = 55 V; VGS = 0 V; VGS = 10 V Tj = 150C Tj = 150C Tj = 150C MIN. 55 50 2.0 1.2 16 TYP. 3.0 0.05 0.04 30 MAX. 4.0 4.4 10 100 1 10 40 74 UNIT V V V V V A A A A V m m Gate source breakdown voltage IG = 1 mA Drain-source on-state VGS = 10 V; ID = 5 A resistance DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time CONDITIONS VDS = 25 V; ID = 5 A; Tj = 25C ID = 9 A; VDD = 44 V; VGS = 10 V MIN. 3 TYP. 12 18 4.5 10 700 200 100 15 50 33 20 MAX. 880 240 140 23 75 50 30 UNIT S nC nC nC pF pF pF ns ns ns ns VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 9 A; VGS = 10 V; Rg = 10 Tj = 25C REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = -55 to 175C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Tsp = 25C Tsp = 25C IF = 5 A; VGS = 0 V IF = 5 A; -dIF/dt = 100 A/s; VGS = -10 V; VR = 30 V MIN. TYP. 0.85 45 0.3 MAX. 10.7 40 1.1 UNIT A A V ns C December 1997 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 3.6 A; VDD 25 V; VGS = 10 V; RGS = 50 ; Tsp = 25 C MIN. TYP. - PHT11N06T MAX. 60 UNIT mJ December 1997 3 Rev 1.100 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET PHT11N06T 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1E+02 3E+01 1E+01 3E+00 1E+00 3E-01 1E-01 3E-02 Zth / (K/W) BUK9840-55 0.5 0.2 0.1 0.05 0.02 P D tp D = tp T T 0 1E-05 1E-03 t/s 1E-01 t 0 20 40 60 80 100 Tmb / C 120 140 1E-02 1E-07 1E+01 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tsp) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-sp = f(t); parameter D = tp/T 20 ID/A 10 120 110 100 90 80 70 60 50 40 30 20 10 0 16 8.0 6.5 VGS/V = 6.0 15 5.5 10 5.0 5 4.5 0 20 40 60 80 Tmb / C 100 120 140 4.0 0 0 2 4 6 8 10 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tsp); conditions: VGS 10 V Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS RDS(ON)/mOhm VGS/V = 5.5 6 60 BUKX840-55 80 70 100 ID/A RDS(ON) = VDS/ID 10 tp = 1 us 10 us 100 us 1 ms DC 1 10 ms 100 ms 50 40 30 20 10 6.5 7 8 10 0.1 0.1 1 VDS/V 10 55 0 0 5 10 ID/A 15 20 25 Fig.3. Safe operating area. Tsp = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS December 1997 4 Rev 1.100 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET PHT11N06T 20 ID/A 5 VGS(TO) / V max. BUK78xx-55 15 4 typ. 3 10 Tj/C = 5 150 25 min. 2 1 0 0 -100 0 1 2 3 VGS/V 4 5 6 7 -50 0 50 Tj / C 100 150 200 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 16 gfs/S 14 12 10 8 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Sub-Threshold Conduction 1E-01 1E-02 2% typ 98% 1E-03 1E-04 6 4 2 1E-05 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 ID/A 1E-06 0 1 2 3 4 5 Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS 1.4 1.2 2.5 a BUK98XX-55 Rds(on) normalised to 25degC Thousands pF 2 1.0 0.8 Ciss 0.6 0.4 0.2 1.5 1 0.5 -100 Coss Crss -50 0 50 Tmb / degC 100 150 200 0 0.01 0.1 1 VDS/V 10 100 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 5 A; VGS = 10 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz December 1997 5 Rev 1.100 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET PHT11N06T 12 VGS/V 10 120 110 100 90 80 VDS = 14V VDS = 44V WDSS% 8 70 60 50 40 30 20 10 0 20 40 60 80 100 Tmb / C 120 140 6 4 2 0 0 5 10 QG/NC 15 20 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 9 A; parameter VDS 20 IF/A Fig.15. Normalised avalanche energy rating. WDSS% = f(Tsp); conditions: ID = 3.6 A + L Tj/C = 150 25 VDD 15 VDS VGS 0 T.U.T. R 01 shunt 10 -ID/100 5 RGS 0 0 0.2 0.4 0.6 0.8 VSDS/V 1 1.2 1.4 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD ) + RD VDS VGS 0 RG T.U.T. VDD - Fig.17. Switching test circuit. December 1997 6 Rev 1.100 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET MOUNTING INSTRUCTIONS PHT11N06T Dimensions in mm. 3.8 min 1.5 min 2.3 1.5 min (3x) 6.3 1.5 min 4.6 Fig.18. soldering pattern for surface mounting SOT223. PRINTED CIRCUIT BOARD December 1997 7 Rev 1.100 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET PHT11N06T Dimensions in mm. 36 18 60 9 4.6 4.5 10 7 15 50 Fig.19. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). December 1997 8 Rev 1.100 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET MECHANICAL DATA Dimensions in mm Net Mass: 0.11 g 0.32 0.24 6.7 6.3 3.1 2.9 B PHT11N06T 0.2 M A 4 A 0.10 0.02 3.7 3.3 13 7.3 6.7 16 max 1 10 max 1.8 max 1.05 0.85 4.6 2.3 2 0.80 0.60 3 0.1 M (4x) B Fig.20. SOT223 surface mounting package. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". December 1997 9 Rev 1.100 Philips Semiconductors Product specification TrenchMOSTM transistor Standard level FET DEFINITIONS Data sheet status Objective specification Product specification Limiting values PHT11N06T This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 10 Rev 1.100 |
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